 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| FSU02LG General Purpose GaAs FET FEATURES * High Output Power: P1dB = 23.0dBm (Typ.)@2GHz * High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz * Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz * Low Bias Conditions: VDS=3V, 20mA * Cost Effective Hermetic Microstrip Package * Tape and Reel Available DESCRIPTION The FSU02LG is a high performance, low noise, GaAs FET designed for PCS/PCN applications as a driver in the 2GHz band. Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Note: Mounted on Al2O3 board (30 x 30 x 0.65mm) Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 6 volts. 2. The forward and reverse gate currents should not exceed 1.4 and -0.2 mA respectively with gate resistance of 2000. 3. The operating channel temperature (Tch) should not exceed 145C. Symbol VDS VGS Ptot Tstg Tch Condition Rating 12 -5 Unit V V mW C C Note 750 -65 to +175 175 ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Noise Figure Associated Gain Thermal Resistance AVAILABLE CASE STYLES: LG Note: The RF parameters are measured on a lot basis by sample testing at an AQL = 0.1%, Level-II inspection. Any lot failure shall be 100% retested. Symbol IDSS gm Vp VGSO P1dB G1dB NF Gas Rth Test Conditions VDS = 3V, VGS = 0V VDS = 3V, IDS =54mA VDS = 3V, IDS = 5.4mA IGS = -5.4A VDS = 6V IDS(DC) = 80mA f = 2GHz VDS = 3V IDS = 20mA f = 2GHz Channel to Case Min. 80 -0.7 -5 22.0 16.0 - Limit Typ. Max. 110 150 100 -1.2 23.0 17.0 1.5 17.5 150 -1.7 200 Unit mA mS V V dBm dB dB dB C/W G.C.P.: Gain Compression Point Edition 1.2 July 1999 1 FSU02LG General Purpose GaAs FET ASSOCIATED GAIN vs. DRAIN-SOURCE CURRENT VDS = 3V f = 2.0 GHz 18.5 Associated Gain (dB) 1.8 Noise Figure (dB) 18 17.5 17 16.5 16 20 40 60 80 Drain-Source Current (mA) 1.7 1.6 1.5 1.4 1.3 1.2 20 40 60 80 Drain-Source Current (mA) NOISE FIGURE vs. DRAIN-SOURCE CURRENT 1.9 VDS = 3V f = 2.0 GHz OUTPUT POWER & IM3 vs. INPUT POWER POWER DERATING CURVE 800 Single Tone 2-Tone -10 Total Power Dissipation (mW) VDS = 6V 23 f = 2 GHz 21 f = +1 MHz 19 I DS = 80mA Total Output Power (dBm) 17 15 13 11 9 7 5 3 1 -1 -3 -5 -13 IM3 Pout 600 -20 400 -30 IM3 (dBc) 200 -40 0 -50 50 100 150 200 Case Temperature (C) -10 -7 -4 -1 2 5 8 -60 Total Input Power (dBm) 2 FSU02LG General Purpose GaAs FET +j50 +j100 +j25 2.0 3.0 S11 S22 +90 S21 S12 +j10 +j250 1.0 GHz 4 GHz 2.0 1.0 GHz 3.0 4 GHz 0 10 25 50 100 1.0 GHz 250 180 8 6 4 2 .05 0 SCALE FOR |S21| SCALE FOR |S12| -j10 4 GHz 4 GHz 3.0 2.0 -j250 3.0 1.0 GHz -j25 2.0 -j100 -90 -j50 FREQUENCY (GHZ) 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 3200 3400 3600 3800 4000 S11 MAG .993 .982 .971 .952 .938 .921 .899 .880 .836 .843 .829 .818 .802 .781 .774 .766 .758 .753 .747 ANG -19.6 -29.3 -38.8 -47.9 -56.5 -65.0 -73.0 -80.7 -88.2 -95.1 -101.7 -108.1 -114.5 -120.2 -125.1 -130.5 -135.5 -140.5 -145.0 S-PARAMETERS VDS =6V, IDS = 80mA S21 S12 MAG ANG MAG ANG 7.407 7.259 7.115 6.925 6.704 6.450 6.198 5.954 5.722 5.503 5.270 5.054 4.836 4.608 4.449 4.292 4.135 3.985 3.849 165.2 157.9 150.8 144.0 137.3 130.9 125.0 119.2 113.6 108.4 103.2 98.3 93.5 89.4 85.2 81.0 77.0 73.0 69.0 .012 .018 .023 .029 .032 .037 .041 .043 .046 .048 .051 .053 .055 .054 .055 .055 .056 .057 .059 76.3 74.8 68.3 62.7 59.1 54.8 51.3 47.6 42.2 40.1 38.2 34.5 30.0 27.1 27.6 23.5 23.0 21.5 20.4 S22 MAG .593 .589 .580 .570 .560 .547 .536 .524 .513 .500 .490 .480 .465 .453 .452 .448 .443 .438 .433 ANG -9.4 -14.4 -19.2 -23.6 -27.8 -31.7 -36.5 -39.3 -42.9 -46.3 -49.7 -53.3 -56.5 -58.2 -60.8 -64.0 -66.8 -70.0 -73.2 Download S-Parameters, click here 3 FSU02LG General Purpose GaAs FET Case Style "LG" Metal-Ceramic Package 4.780.5 1.50.3 (0.059) 1.780.15 1.50.3 (0.07) (0.059) 1.50.3 (0.059) 1.0 (0.039) 1 1.780.15 1.50.3 (0.07) (0.059) 4.780.5 4 3 2 0.5 (0.02) Gold Plated Leads 1.3 Max (0.051) 1. 2. 3. 4. 0.1 (0.004) Gate Source Drain Source Unit: mm(inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS EUROPE, GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: * Do not put these products into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4 |
Price & Availability of FSU02LG
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |